The research team, Samsung Advanced Institute of Technology (SAIT) in collaboration with UNIST and Cambridge University announced the discovery of a new material – amorphous boron nitride (a-BN). According to the company, this finding may accelerate the emergence of next-generation semiconductors.
The company promised that the amorphous boron nitride are used in semiconductors, including in the decisions of DRAM and NAND.
That gives the new material
Amorphous boron nitride is composed of atoms of boron and nitrogen with an amorphous structure with a thickness of one molecule. It was received from the “white graphene” – boron nitride in which boron atoms and nitrogen built into the crystal lattice in the form of a hexagon. It is in the arrangement of the elements lies the key difference between the materials.
New material will be used in the development of semiconductors of the next generation
According to the researchers, amorphous boron nitride has a best-in-class ultra-low dielectric constant of 1.78. In addition, this material is characterized by strong electrical and mechanical properties. It can be used as insulation in the joints to minimize electrical interference.
New material can be produced in large enough scale at a relatively low temperature of 400°C. To Samsung are going to start to use amorphous boron nitride to create operational modules (DRAM) and permanent (NAND) memory, but talk about the timing of the appearance of the finished product yet.
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